PART |
Description |
Maker |
RJK1056DPB RJK1056DPB-15 |
100V, 25A, 14m max. Silicon N Channel Power MOS FET Power Switching 100V, 25A, 14m?max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
TSMBG1005C TSMBG1006C TSMBG1007C TSMBG1009C TSMBG1 |
SINGLE BIDIRECTIONAL BREAKOVER DIODE|100V V(BO) MAX|DO-215AA SINGLE BIDIRECTIONAL BREAKOVER DIODE|110V V(BO) MAX|DO-215AA SINGLE BIDIRECTIONAL BREAKOVER DIODE|145V V(BO) MAX|DO-215AA SINGLE BIDIRECTIONAL BREAKOVER DIODE|185V V(BO) MAX|DO-215AA SINGLE BIDIRECTIONAL BREAKOVER DIODE|200V V(BO) MAX|DO-215AA SINGLE BIDIRECTIONAL BREAKOVER DIODE|210V V(BO) MAX|DO-215AA SINGLE BIDIRECTIONAL BREAKOVER DIODE|215V V(BO) MAX|DO-215AA SINGLE BIDIRECTIONAL BREAKOVER DIODE|250V V(BO) MAX|DO-215AA SINGLE BIDIRECTIONAL BREAKOVER DIODE|265V V(BO) MAX|DO-215AA SINGLE BIDIRECTIONAL BREAKOVER DIODE|300V V(BO) MAX|DO-215AA SINGLE BIDIRECTIONAL BREAKOVER DIODE|350V V(BO) MAX|DO-215AA SINGLE BIDIRECTIONAL BREAKOVER DIODE|440V V(BO) MAX|DO-215AA 单双向击穿二极管| 440V五(公报)最大|的DO - 215AA
|
ITT, Corp.
|
SGW10N60RUF |
FEEDTHRU CAPACITOR, 220PF 0.5A 100VFEEDTHRU CAPACITOR, 220PF 0.5A 100V; Capacitance:0.22nF; Voltage rating, DC:100V; Capacitor dielectric type:Ceramic Multi-Layer; Tolerance, :50%; Tolerance, -:20%; Temp, op. max:125(degree C); Short Circuit Rated IGBT
|
FAIRCHILD SEMICONDUCTOR CORP FAIRCHILD[Fairchild Semiconductor]
|
IRFP4710 IRFP4710PBF |
100V Single N-Channel HEXFET Power MOSFET in a TO-247AC package Power MOSFET(Vdss=100V, Rds(on)max=0.014ohm, Id=72A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rdson)最大值\u003d 0.014ohm,身份证\u003d 72A条)
|
IR International Rectifier, Corp.
|
T308N2000TOF |
2.0kV V[drm] Max., 308A I[T] Max. Silicon Controlled Rectifier
|
Telefunken Electronic
|
74HC HCMOS 74HCT 74HCU |
: Conductor AWG#18 to #22; Termination Style: Crimping; Current Rating(Amps)(Max.): 5; Contact Mating Area Plating: Palladium; Operating Temperature Small Signal Bipolar Transistor; Collector Emitter Voltage, Vceo:100V; Transistor Polarity:N Channel; C-E Breakdown Voltage:100V; DC Current Gain Min (hfe):30; Package/Case:R245; Collector Base Voltage:120V HCMOS family characteristics
|
Philips Semiconductors NXP Semiconductors
|
TEA1522P TEA1524P TEA1522T TEA1521 TEA1521P TEA152 |
CAP .082UF 100V PEN FILM 1913 5% STARplug SWITCHING REGULATOR, 200 kHz SWITCHING FREQ-MAX, PDIP8
|
Philips Semiconductors NXP Semiconductors N.V.
|
1KSMBJ11A 1KSMBJ9.1A 1KSMBJ51A 1KSMBJ91A 1KSMBJ24A |
Standard Recovery Rectifier; Repetitive Reverse Voltage Max, Vrrm:600V; Forward Current Avg Rectified, IF(AV):1A; Non Repetitive Forward Surge Current Max, Ifsm:30A; Forward Voltage Max, VF:1.1V; Package/Case:DO-41 Silicon Avalanche Diodes - 1000W Surface Mount Transient Voltage Suppressor 硅雪崩二极管- 1000瓦表面贴装瞬态电压抑制器
|
Littelfuse, Inc.
|
MP39 MP39CL |
Amplifiers - Operational PWR Op Amp 100V 10A OP-AMP, 10000 uV OFFSET-MAX, 2 MHz BAND WIDTH, DMA30 POWER OPERATIONAL AMPLIFIER
|
Cirrus Logic, Inc. http://
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